Study on melting and thermal-stress damage thresholds of silicon induced by long pulsed laser at 0.532, 1.064 and 10.6 μm

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• 作者：Guibo Chen ; Juan Bi ; ^{custcb@126.com}
• 关键词：Laser damage ; Damage threshold ; Thermal stress ; Different wavelengths
• 刊名：Optik - International Journal for Light and Electron Optics
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：131
• 期：Complete
• 页码：917-924
• 全文大小：800 K
• 卷排序：131

文摘

In this paper, we present the melting and thermal-stress damage thresholds of silicon induced by long pulsed laser at 0.532, 1.064 and 10.6 μm. Physical model of the problem is established based on the classical heat transfer and thermal-elasticity theory, and analytical solutions of temperature, thermal-stress and damage threshold are obtained by using integral transform method. Melting and thermal-stress damage thresholds of silicon were modeled and mechanism of laser damage to silicon was analyzed. Results show that, the damage threshold of silicon due to 0.532 μm laser irradiating is lower than that of 1.064 and 10.6 μm laser irradiating, and the damage mechanism of silicon material is mainly the melting damage.