3D modeling of doping from the atmosphere in floating zone silicon crystal growth

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• 作者：A. Sabanskis ; ^{andrejs.sabanskis@lu.lv} ; K. Surovovs ; J. Virbulis
• 关键词：A1. Computer simulation ; A1. Convection ; A1. Doping ; A1. Surface processes ; A2. Floating zone technique ; B2. Semiconducting silicon
• 刊名：Journal of Crystal Growth
• 出版年：2017
• 出版时间：1 January 2017
• 年：2017
• 卷：457
• 期：Complete
• 页码：65-71
• 全文大小：4559 K
• 卷排序：457

文摘

A 3D model of doping from the atmosphere for FZ silicon crystal growth is presented. Dopant (phosphorus) transport in gas and melt is modeled. Phosphorus leaves the melt through the free melt surface. A good agreement of the RRV profiles with experiment is obtained. Chemical rate temperature dependence at the free surface is taken into account.