Fabrication of nanostructured ZnO thin films based NO2 gas sensor via SILAR technique
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- 作者：Vithoba L. PatilaAuthor Vitae ; Sharadrao A. Vanalakara ; b ; sharad.vanalakar@gmail.com" class="auth_mail" title="E-mail the corresponding authorAuthor Vitae ; Pramod S. Patilc ; psp_phy@unishivaji.ac.in" class="auth_mail" title="E-mail the corresponding authorAuthor Vitae ; Jin H. Kimb ; jinhyeok@chonnam.ac.kr" class="auth_mail" title="E-mail the corresponding authorAuthor Vitae
- 关键词：SILAR ; ZnO ; Thin film ; Nanostructure ; Gas sensor
- 刊名：Sensors & Actuators: B. Chemical
- 出版年：2017
- 出版时间：February 2017
- 年：2017
- 卷：239
- 期：Complete
- 页码：1185-1193
- 全文大小：3885 K
文摘
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Preparation of nanostructured ZnO by using the simplistic SILAR technique.
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Formation of well-dispersed ZnO nanoparticles having sizes of ∼18–40 nm.
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The ZnO thin films were exposed to NO2 gas with a concentration of 100 ppb–200 ppm.
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Our ZnO based gas sensor is sensitive to very low concentrations of dangerous NO2 (100 ppb).