A three-terminal planar selfgating device for nanoelectronic applications

详细信息    查看全文

• 作者：T. M&#xfc ; ller ; A. Lorke ; Q.T. Do ; F.J. Tegude ; D. Schuh and W. Wegscheider
• 关键词：Planar in-plane gate diode ; Selfgating ; In-plane gates ; Nanoelectronics ; Device simulation
• 刊名：Solid-State Electronics
• 出版年：2005
• 出版时间：December 2005
• 年：2005
• 卷：49
• 期：12
• 页码：1990-1995
• 全文大小：362 K

文摘

We report on a new nanoelectronic planar three-terminal device, fabricated from III/V semiconductor-based heterosystems. Utilizing the benefits of selfgating and in-plane gates, the tunable three-terminal device presented exhibits strong non-linear input- and transfer-characteristics, both, at liquid Helium and at room temperature. For a given side-gate voltage, the devices input characteristics closely resemble that of a conventional diode, although it is fabricated by a single post-growth patterning process only, i.e., etching of deep trenches. We present a simple model, based on an equivalent circuit, which well reproduces the experimental findings. Possible applications are discussed.