Defect recognition by means of light and electron probe techniques for the characterization of mc-Si wafers and solar cells

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• 作者：B. Moralejo ; A. Tejero ; V. Hortelano ; O. Mart&iacute ; nez ; ^{oscar@fmc.uva.es} ; M.A. Gonz&aacute ; lez ; J. Jim&eacute ; nez
• 关键词：mc-Si ; qm-Si ; Si-Ribbon ; LBIC ; EBIC ; PLi ; Raman ; GBs ; Sub-GBs
• 刊名：Superlattices and Microstructures
• 出版年：2016
• 出版时间：November 2016
• 年：2016
• 卷：99
• 期：Complete
• 页码：45-53
• 全文大小：2672 K
• 卷排序：99

文摘

PLI technique permits, in a short time, a panoramic view of the main carrier capture centers in a full wafer, but has no very large resolution. LBIC and EBIC techniques are very suitable for a detailed inspection of the electrical activity of defects, but are time consuming. μRaman spectroscopy can provide valuable information on the residual stress levels of the defect rich areas, because stress is relevant for defect gettering. Combining PLI with scanning optical and electrical techniques allows for a quick inspection of the samples and the detailed characterization of the electrically active defects.