Tunable emission and conductivity enhancement by tellurium doping in CdS nanowires for optoelectronic applications

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• 作者：Muhammad Arshad Kamran^a ; ^{m.kamran@mu.edu.sa} ; Ghulam Nabi^b ; ^c ; Abdul Majid^a ; Muhammad Waqas Iqbal^a ; Thamer Alharbi^a ; Yongyou Zhang^d ; Bingsuo Zou^d
• 关键词：Cadmium sulfide ; Tellurium ; CVD ; Nanowires ; Photoluminescence
• 刊名：Physica E: Low-dimensional Systems and Nanostructures
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：86
• 期：Complete
• 页码：81-87
• 全文大小：1327 K
• 卷排序：86

文摘

First synthesis of tellurium doped in 1D CdS nanostructures via CVD technique. Te concentration plays an important role in tuning emission from 604–881 nm. Importantly, IR emission is observed for the first time in CdS NWs. Doping of Te induces enhancement in output current Ids. The results are helpful in improving the performance of 1D optoelectronic devices.