Optimization of post deposition annealing temperature of direct current magnetron reactive sputtered zirconium titanate thin films for refractory oxide applications
ZTO films were treated with rapid thermal annealing in oxygen atmosphere. The films exhibited a high transmittance over a wide range of wave lengths. The structural rearrangement and re crystallization started at an annealing temperature of 300 °C. Further higher temperatures resulted in the re evaporation of deposited atoms. It is found that the optimal annealing temperature range is 400–500oC.