Surface modification and oxidation of Si wafers after low energy plasma treatment in hydrogen, helium and argon

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• 作者：S.Yu. Turishchev ; V.A. Terekhov ; E.V. Parinova ; O.V. Korolik ; A.V. Mazanik ; A.K. Fedotov
• 关键词：X-ray absorption near edge structure ; Electronic structure ; Low energy plasma treatment ; Silicon wafers ; Silicon oxide nanolayers
• 刊名：Materials Science in Semiconductor Processing
• 出版年：2013
• 出版时间：December, 2013
• 年：2013
• 卷：16
• 期：6
• 页码：1377-1381
• 全文大小：1234 K

文摘

Surface layers of the single crystalline silicon wafers subjected to low-energy hydrogen, helium and argon plasma treatments were investigated using X-ray absorption near edge structure spectroscopy (XANES) with the use of synchrotron radiation. It was shown that a surface silicon oxide layer with a thickness greater than native silicon oxide is formed as a result of such treatment. At the same time, in the investigated wafers the surface layers of a few nanometers appear to contain elemental silicon in a disordered (amorphous) state. Possible clusterization of Si in the surface layers was considered to result from the plasma treatment.