Fast atom diffraction inside a molecular beam epitaxy chamber, a rich combination
详细信息 查看全文
- 作者：M. Debiossaca ; P. Atkinsonb ; A. Zugarramurdia ; M. Eddriefb ; F. Finocchib ; V.H. Etgensb ; A. Momenia ; H. Khemlichea ; A.G. Borisova ; P. Roncina ;
- 关键词：Atomic diffraction ; Molecular beam epitaxy ; GaAs β2(2 ; × ; ; 4) reconstruction
- 刊名：Applied Surface Science
- 出版年：2017
- 出版时间：1 January 2017
- 年：2017
- 卷：391
- 期：part_PA
- 页码：53-58
- 全文大小：1921 K
文摘
- •
Diffraction is recorded along the [010] direction of the β2(2 × 4) GaAs(001) surface.
- •
Odd diffraction orders are absent indicating a pseudo symmetry of half a unit cell.
- •
This is interpreted as due to the As dimer of the terminal layer.
- •
The FWHM of the scattering profile could also be a way to track the number of layers.
- •
During growth, oscillations of the elastic diffraction intensity drop to zero.