Performance comparison of single and dual metal dielectrically modulated TFETs for the application of label free biosensor

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• 作者：Madhulika Verma ^{madhulikaverma@iiitdmj.ac.in} ; Dheeraj Sharma ^{dheeraj@iiitdmj.ac.in} ; Sunil Pandey ; ^{sunilpandey@iiitdmj.ac.in} ; Kaushal Nigam ^{kaushal.nigam@iiitdmj.ac.in} ; P.N. Kondekar ^{pnkondekar@iiitdmj.ac.in}
• 关键词：Band to band tunneling (BTBT) ; Dielectrically modulated TFETs ; Biosensors ; Technology computer aided design (TCAD) ; Sensitivity
• 刊名：Superlattices and Microstructures
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：101
• 期：Complete
• 页码：219-227
• 全文大小：3850 K
• 卷排序：101

文摘

In this work, a detailed sensitivity comparison is made between single and dual metal short gate DMTFET for the application of label free biosensor. The incorporation of dual metal gate in SG-DMTFET offers significant improvement in the sensitivity over single metal gate. However, it is found that relative sensitivity of DSG structure is higher than other possible structures without considerable fabrication complexity. It is important to point out that biasing condition also decides a precise biasing range for achieving maximum sensitivity enhancement of proposed device. Besides structurally enhanced conjugation effect, the gate material engineering also improves the sensitivity of the device.