Crystal growth and magnetic property of a new compound CeAu₄Si₂

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• 作者：Hiroshi Nakashima ; Arumugam Thamizhavel ; Tatsuma D. Matsuda ; Yoshinori Haga ; Tetsuya Takeuchi ; Kiyohiro Sugiyama ; Rikio Settai and Yoshichika Ō ; nuki
• 刊名：Journal of Alloys and Compounds
• 出版年：2006
• 出版时间：9 November 2006
• 年：2006
• 卷：424
• 期：1-2
• 页码：7-12
• 全文大小：348 K

文摘

We have succeeded in growing a new ternary Ce compound CeAu₄Si₂. This compound crystallizes in the tetragonal crystal structure ( 1 1 5) with lattice parameters a=4.3304  Å and c=27.409  Å. The local environment around Ce atoms is similar to that of the well-known ThCr₂ Si₂-type tetragonal structure in CeAu₂ Si₂. Single crystals of CeAu₄Si₂ were grown by the flux method using an Au_4.37 Si eutectic alloy as flux. Electrical resistivity, specific heat and magnetization measurements revealed a ferromagnetic ordering at T_C=5.3  K with a saturation moment of 1.7 μ_B /Ce. Anisotropic features in the magnetic susceptibility and magnetization were well explained by a crystalline electric field (CEF) model. Estimated excitation energies from the ground state doublet to two excited doublets are 284 and 340 K, respectively.