Fabrication of zinc oxide/ polyaniline (ZnO/PANI) heterojunction and its characterisation at room temperature

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• 作者：N. Santakrus Singh^a ; ^{santakrus@hindu.du.ac.in} ; Lalit Kumar^a ; ^{lalitkrchauhan@gmail.com} ; Ajai Kumar^b ; S. Vaisakh^a ; S. Daniel Singh^a ; Kunal Sisodiya^a ; Sashank Srivastava^a ; Mansha Kansal^a ; Suyash Rawat^a ; Th. Anil Singh^a ; Tanya^b ; Anita^b
• 关键词：ZnO/PANI heterojunction ; RF sputtering ; Diode parameters ; Current mechanism
• 刊名：Materials Science in Semiconductor Processing
• 出版年：2017
• 出版时间：15 March 2017
• 年：2017
• 卷：60
• 期：Complete
• 页码：29-33
• 全文大小：624 K
• 卷排序：60

文摘

We report the formation of a diode like ZnO/PANI heterojunction structure by RF sputtering technique with a high rectification ratio in the laboratory. The diode parameters obtained from the I-V data using the established methods of Cheung and Norde's function, based on the thermionic emission model of diode, agrees with each other. The current mechanism in the diode was ohmic at lower voltages (at voltages less than 2.8 V) where as space charge limited current (SCLC) dominates at higher voltage (above 3.5 V). The measured I-V characteristics remain the same under bending conditions also. This indicates that this heterojunction could be exploited positively in flexible electronics.