Metal-insulator-SiC Schottky structures using HfO₂ and TiO₂ dielectrics

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• 作者：I.R. Kaufmann^a ; ^{ivanrodrigo.kaufmann@gmail.com} ; A. Pick^b ; M.B. Pereira^b ; H. Boudinov^a ; ^b
• 关键词：MIS structure ; SiC ; Schottky barrier height ; HfO2 ; TiO2
• 刊名：Thin Solid Films
• 出版年：2017
• 出版时间：1 January 2017
• 年：2017
• 卷：621
• 期：Complete
• 页码：184-187
• 全文大小：557 K
• 卷排序：621

文摘

Ni/HfO2/SiC and Ni/TiO2/SiC structures were fabricated. Schottky parameters were extracted from variable temperature Current-Voltage curves. Insulating layers thicknesses were estimated by modified Thermionic Emission model. Thicker dielectrics increase ideality factor and reduce Schottky Barrier Height. The fabricated Schottky diodes can be used as particle detectors.