Theoretical study of thermoelectric properties of p-type Mg2 Si1−x Snx solid solutions doped with Ga
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- 作者：Ö ; vgü ; Ceyda Yelgel oceyda.yelgel@erdogan.edu.tr" class="auth_mail" title="E-mail the corresponding author
- 关键词：Thermoelectric materials ; Thermoelectric figure of merit ; Electrical transport properties ; Thermal transport properties ; Mg2SiSn systems
- 刊名：Journal of Alloys and Compounds
- 出版年：2017
- 出版时间：15 January 2017
- 年：2017
- 卷：691
- 期：Complete
- 页码：151-158
- 全文大小：1453 K
文摘
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The accurate quantification of Ef − T is a key to the modeling of TE properties.
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In Mg2Si1−xSnx, acoustic deformation potential scattering leads reduction in κph.
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ZTmax = 0.355 is gained for y = 0.05 since its high S and low κtotal values.