Stoichiometric p-type Cu₂O thin films prepared by reactive sputtering with facing target

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• 作者：Jeung Sun Ahn^a ; Ramchandra Pode^a ; Kwang Bae Lee^b ; ^{kblee@sangji.ac.kr}
• 关键词：p-Type Cu2O thin film ; Facing target sputtering ; Stoichiometry ; Vacuum annealing ; Hall mobility
• 刊名：Thin Solid Films
• 出版年：2017
• 出版时间：1 February 2017
• 年：2017
• 卷：623
• 期：Complete
• 页码：121-126
• 全文大小：1080 K
• 卷排序：623

文摘

As-deposited stoichiometric Cu2O films were prepared by facing target sputtering. Stoichiometric films with high [111] orientation show minimal electrical resistivity. P-type Cu2O thin films were produced by vacuum-annealing at 550 °C. Thickness dependence of hole mobility was found for Cu2O/glass. High mobility of 61 cm2/Vs is obtained in stoichiometric p-type Cu2O films.