Small-signal characterization and modelling of 55 nm SiGe BiCMOS HBT up to 325 GHz

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• 作者：Marina Deng^a ; ^{marina.deng@ims-bordeaux.fr} ; Thomas Qué ; merais^b ; Simon Bouvot^a ; ^b ; Daniel Gloria^b ; Pascal Chevalier^b ; Sylvie Lé ; pilliet^a ; Fran&ccedil ; ois Danneville^a ; Gilles Dambrine^a
• 关键词：Device characterization ; G-band ; H-band ; Heterojunction bipolar transistors (HBTs) ; Silicon-Germanium (SiGe)
• 刊名：Solid-State Electronics
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：129
• 期：Complete
• 页码：150-156
• 全文大小：1971 K
• 卷排序：129

文摘

The SiGe HBT S-parameters from 250 MHz to 325 GHz are presented for the first time. Standard calibration and de-embedding techniques remained valid up to 325 GHz. A small-signal model was compared with measurements up to 325 GHz.