Steep sub-threshold current slope (∼2 mV/dec) Pt/Cu₂S/Pt gated memristor with l_on/I_off > 100

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• 作者：N.I. Mou^a ; Y. Zhang^a ; P. Pai^a ; ² ; M. Tabib-Azar^b ; ^{azar@berkeley.edu}
• 关键词：Memristors ; Resistive memory devices ; Mott transition ; Steep MOSFET
• 刊名：Solid-State Electronics
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：127
• 期：Complete
• 页码：20-25
• 全文大小：1492 K
• 卷排序：127

文摘

Memristors with steep off-on transitions and high “on” currents are excellent candidates for very low power and efficient electronics. Owing to their switching mechanism based on ion motion and oxidation/reduction process, memristors bridge the gap between MEMS and MOSFETs. They have better reliability similar to MOSFETS and at the same time have the more desirable off-to-on current ratios of MEMS. Here we show that by adding a gate electrode to memristors, the SET/RESET voltages in electrochemical memristors can be controlled enabling their applications in circuits with high input/output isolations. We discuss devices with 2 mV/dec sub-threshold slope and show that the gate field effect can be used to modify the SET/RESET voltages considerably. In addition to enabling very low power switches using memristors, the gate can also be used as a global RESET.