Analytical models for channel potential, threshold voltage, and subthreshold swing of junctionless triple-gate FinFETs

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• 作者：Guangxi Hu ; ^{gxhu@fudan.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Shuyan Hu ; Jianhua Feng ; Ran Liu ; Lingli Wang ; Lirong Zheng
• 关键词：Semiconductor device ; Analytical ; MOSFET ; Modeling and simulation
• 刊名：Microelectronics Journal
• 出版年：2016
• 出版时间：April 2016
• 年：2016
• 卷：50
• 期：Complete
• 页码：60-65
• 全文大小：1443 K

文摘

Analytical models for channel potential, threshold voltage, and subthreshold swing of the short-channel fin-shaped field-effect transistor (FinFET) are obtained. The analytical model results are verified against simulations and good agreements are observed. Analytical expressions for subthreshold swing, drain induced barrier lowering effect, and threshold voltage roll-off characteristics are presented. The explicit expressions for threshold voltage and subthreshold swing make the model useful in the practical applications of the device.