A novel gate and drain engineered charge plasma tunnel field-effect transistor for low sub-threshold swing and ambipolar nature

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• 作者：Dharmendra Singh Yadav ^{tech.dharmendra26@gmail.com} ; Bhagwan Ram Raad ; ^{bhagwanramraad@gmail.com} ; Dheeraj Sharma ^{dheeraj24482@gmail.com}
• 关键词：Ambipolar conduction ; Charge plasma ; Sub-threshold swing ; Gate to drain capacitance ; Work function engineering
• 刊名：Superlattices and Microstructures
• 出版年：2016
• 出版时间：December 2016
• 年：2016
• 卷：100
• 期：Complete
• 页码：266-273
• 全文大小：1934 K
• 卷排序：100

文摘

Proposed work uses drain and gate work function engineering on the charge plasma tunnel field effect transistor. The use of gate work function engineering by creating a section of lower work function of gate electrode near to channel/source interface provides the steeper subthreshold slope; improve ON-state current and significant reduction in threshold voltage. The drain work function engineering by creating a section of relatively higher work function near to channel region of the drain terminal which is used to induce the N+ region widens the lateral tunneling distance on the drain/channel interface to prevent the flow of holes on the same junction. This provides lower gate to drain capacitance results in better channel controlling and improved high frequency figure of merit.