In-situ X-ray μLaue diffraction study of copper through-silicon vias
详细信息 查看全文
- 作者：Dario Ferreira Sancheza ; b ; Dario.Ferreira@psi.ch" class="auth_mail" title="E-mail the corresponding author ; dario.f.sanchez@gmail.com" class="auth_mail" title="E-mail the corresponding author ; Shay Reboha ; b ; Monica Larissa Djomeni Weleguelaa ; b ; Jean-Sé ; bastien Michab ; c ; d ; Odile Robachb ; c ; d ; Thierry Mouriera ; b ; thierry.mourier@cea.fr" class="auth_mail" title="E-mail the corresponding author ; Patrice Gergauda ; b ; Pierre Bleueta ; b
- 关键词：Through silicon vias (TSVs) ; Microelectronics reliability ; Copper extrusion ; Laue micro-diffraction
- 刊名：Microelectronics Reliability
- 出版年：2016
- 出版时间：January 2016
- 年：2016
- 卷：56
- 期：Complete
- 页码：78-84
- 全文大小：1582 K
文摘
- •
In-situ strain investigation of a Cu through silicon vias sample using X-ray µLaue diffraction mapping
- •
Analysis (i) at room temperature, (ii) during an annealing at 400°C and, (iii) at room temperature again after the annealing
- •
Original optimized setup configuration and sample preparation with plasma Focused Ion Beam
- •
Analytical and Finite Elements Method approaches combined; the Cu extrusion and grain growth are identified and quantified