Exploration of microfocus and high-resolution X-ray computed tomography on open through silicon vias test structures.

Submicron-sized defects in Cu-plating of open TSVs were non-destructively localized with HR X-ray CT.

Identified defects were verified by destructive mechanical cross-sectioning.

Improved yield of TSV production for RF MEMS integrated passive device applications.

A new electroplating procedure has been established, based on these failure analysis findings.