High-quality ZnO/GaN/Al₂O₃ heteroepitaxial structure grown by LP–MOCVD

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• 作者：Zhao ; Baijun ; Yang ; Hongjun ; Du ; Guotong ; Miao ; Guoqing ; Zhang ; Yuantao ; Gao ; Zhongmin ; Yang ; Tianpeng ; et. al.
• 关键词：78.55.C ; 87.64.Bx ; 82.80.Pv ; 78.55.&minus ; m ; A1. Photoluminescence ; A1. X-ray diffraction ; A1. X-ray Photoelectron spectroscopy ; B1. ZnO/GaN/Al₂O₃
• 刊名：Journal of Crystal Growth
• 出版年：2003
• 出版时间：October, 2003
• 年：2003
• 卷：258
• 期：1-2
• 页码：130-134
• 全文大小：200 K

文摘

High-quality ZnO films were grown on epi-GaN predeposited on c-Al₂O₃ substrates using low-pressure metal-organic chemical vapor deposition (MOCVD). Detailed study of the X-ray diffraction spots and patterns by different diffractometers showed high structural perfection of the zinc oxide layer, which indicated that the growth of ZnO film was strongly c-oriented. The full-width at half-maximum (FWHM) of the ω-rocking curve was 0.39°. Surface morphology of the films studied by AFM showed that the growth of the ZnO film followed the regular hexagonal column structure with about 500nm grain diameter. Zn and O elements in the deposited ZnO/GaN/Al₂O₃ films were investigated and compared by X-ray photoelectron spectroscopy (XPS), in which the dissociative O and Zn atom peak was hardly observed. The ratio of O/Zn atoms of the film was about 1 with O-rich. Photoluminescence spectra of the ZnO films grown on epi-GaN showed dominating exciton emission peak, and the deep-level emission which was obvious on ZnO/Al₂O₃ film had hardly been observed.