Photoluminescence analysis of electron irradiation-induced defects in GaAs/Ge space solar cells

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• 作者：Lu Ming ; Wang Rong ; Yang Kui ; Yi Tiancheng
• 关键词：GaAs/Ge solar cells ; Photoluminescence ; Electron irradiation
• 刊名：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
• 出版年：2013
• 出版时间：1 October, 2013
• 年：2013
• 卷：312
• 期：Complete
• 页码：137-140
• 全文大小：597 K

文摘

Photoluminescence measurements were carried out to investigate the degradation for GaAs/Ge space solar cells which were irradiated with 1.0, 1.8, and 11.5 MeV electrons with fluences up to 3 ¡Á 10¹⁵ cm^?2. The product of the defect introduction rate and the minority carrier capture cross section by electron irradiation-induced defects was determined with photoluminescence radiative efficiency related to the non-radiative recombination lifetime. Then the cross section was acquired according to the relation between the defect introduction rate and the non-ionizing energy loss. Furthermore, the non-radiative recombination could be identified among all the detected defects by comparing the cross section of the minority carrier capture.