Preparation and application in p–n homojunction diode of p-type transparent conducting Ga-doped SnO₂ thin films

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• 作者：Tieying Yang ; Xiubo Qin ; Huan-hua Wang ; Quanjie Jia ; Runsheng Yu ; Baoyi Wang ; Jiaou Wang ; Kurash Ibrahim ; Xiaoming Jiang ; Qing He
• 关键词：p-Type transparent conducting oxide ; Ga-doped SnO₂ ; Thin films ; p– ; n homojunction diode ; Magnetron sputtering ; X-ray diffraction ; X-ray photoelectron spectroscopy
• 刊名：Thin Solid Films
• 出版年：2010
• 出版时间：30 July 2010
• 年：2010
• 卷：518
• 期：19
• 页码：5542-5545
• 全文大小：572 K

文摘

The direct preparation of p-type transparent conducting Ga-doped SnO₂ thin films and their fundamental application in transparent p–n homojunction diode were realized. The films were grown in an active oxygen ambient using reactive rf magnetron sputtering without post-deposition annealing involved. This method improved the electrical properties of the films while maintaining their optical transparency. By growing a p-type thin film on commercial n-type SnO₂:F-coated glass, transparent p–n homojunction diode was obtained. It exhibits a distinct current–voltage rectifying characteristic, manifesting this p-type thin film and the fabrication technology are suitable for industrial applications.