Integration of ammonia-plasma-functionalized graphene nanodiscs as charge trapping centers for nonvolatile memory applications

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• 作者：Jer-Chyi Wang^a ; ^b ; ^m ; Kai-Ping Chang^a ; Chih-Ting Lin^a ; Ching-Yuan Su^c ; Fethullah Gü ; neş^d ; Mohamed Boutchich^e ; Chang-Hsiao Chen^f ; Ching-Hsiang Chen^g ; Ching-Shiun Chen^h ; Lain-Jong Liⁱ ; ^j ; ^{lance.li@kaust.edu.sa} ; Chao-Sung Lai^a ; ^k ; ^l ; ^{cslai@mail.cgu.edu.tw}
• 刊名：Carbon
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：113
• 期：Complete
• 页码：318-324
• 全文大小：1735 K
• 卷排序：113

文摘

Graphene nanodiscs (GNDs), functionalized using NH3 plasma, as charge trapping sites (CTSs) for non-volatile memory applications have been investigated in this study. The fabrication process relies on the patterning of Au nanoparticles (Au-NPs), whose thicknesses are tuned to adjust the GND density and size upon etching. A GND density as high as 8 × 1011 cm−2 and a diameter of approximately 20 nm are achieved. The functionalization of GNDs by NH3 plasma creates NH+ functional groups that act as CTSs, as observed by Raman and Fourier transform infrared spectroscopy. This inherently enhances the density of CTSs in the GNDs, as a result, the memory window becomes more than 2.4 V and remains stable after 104 operating cycles. The charge loss is less than 10% for a 10-year data retention testing, making this low-temperature process suitable for low-cost non-volatile memory applications on flexible substrates.