Electric field induced metal-insulator transition in VO2 thin film based on FTO/VO2/FTO structure
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- 作者：Rulong Haoa ; Yi Lia ; b ; optolyclp@263.net" class="auth_mail" title="E-mail the corresponding author ; Fei Liua ; Yao Sunb ; Jiayin Tanga ; Peizu Chena ; Wei Jianga ; Zhengyi Wua ; Tingting Xua ; Baoying Fanga
- 关键词：VO2/FTO ; DC magnetron sputtering ; Threshold voltage ; Electric induced phase transition
- 刊名：Infrared Physics & Technology
- 出版年：2016
- 出版时间：March 2016
- 年：2016
- 卷：75
- 期：Complete
- 页码：82-86
- 全文大小：1609 K
文摘
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Electric field induced phase transition of VO2 thin film is proposed.
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Optical modulation has been studied based on FTO/VO2/FTO structure.
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Maximum transmission modulation value is 31.4% under different conditions.