Hysteresis-free deposition of TiO_xN_y thin films: Effect of the reactive gas mixture and oxidation of the TiN layers on process control

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• 作者：D.A. Duarte ; M. Massi ; J.C. Sag谩s ; A.S. da Silva Sobrinho ; D.R. Irala ; L.C. Fontana
• 关键词：Reactive deposition ; Berg's model ; Hysteresis ; TiOxNy ; TiO2
• 刊名：Vacuum
• 出版年：March, 2014
• 年：2014
• 卷：101
• 期：Complete
• 页码：200-204
• 全文大小：1613 K

文摘

This paper investigates the effect of the reactive gas mixture (N₂聽+聽O₂聽+聽Ar) and oxidation of the nitride layers on the system stability during the reactive sputter deposition of TiO_xN_y thin films. The present research is an extension of previous investigations conducted by Severin et聽al. (Appl. Phys. Lett., 88 (2006) 161504) and Duarte et聽al. (Appl. Surf. Sci., 269 (2013) 55-59) in which the Berg's model was used to study reactive deposition of oxynitrides. The results show that the addition of N₂ to the process avoids the formation of a hysteresis loop and facilitates the deposition of films with fractions of TiO₂ at any value. These achievements are not possible without this procedure. In contrast, despite eliminating plasma instabilities, the addition of N₂ decreases the mass deposition rate due to the modifications in the sputtering yield. Other results show that the oxidation of TiN also plays a key role in the mass deposition rate and in the hysteresis loop.