Influence of oxygen pressure on microstructure and dielectric properties of lead-free BaTi_0.85Sn_0.15O₃ thin films prepared by pulsed laser deposition

详细信息    查看全文

• 作者：Muying Wu^a ; ^{wumy@dgut.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; ^{wumy01@163.com" class="auth_mail" title="E-mail the corresponding author} ; Shihui Yu^b ; Lin He^a ; Lei Yang^a ; Weifeng Zhang^b
• 关键词：Ba(SnxTi1&minus ; x)O3 ; Dielectric ; Thin films ; Tunable ; Loss tangent
• 刊名：Ceramics International
• 出版年：2016
• 出版时间：1 November 2016
• 年：2016
• 卷：42
• 期：14
• 页码：15793-15797
• 全文大小：2303 K

文摘

Lead-free barium tin titanate BaTi_0.85Sn_0.15O₃ (BTS) ferroelectric thin films have been deposited on Pt/Ti/SiO₂/Si substrates by pulsed laser deposition. The structure and dielectric properties of thin films deposited at various oxygen pressures are investigated systematically. By optimizing the oxygen pressure during the deposition, the structure and dielectric properties are improved. The thin films grown at 15 Pa have the best crystal quality and the largest grain size, which result in the enhancement of the dielectric properties. The dielectric constant and loss tangent show the similar trend in the entire oxygen pressure range. The influence mechanisms of the oxygen pressure on the structure and dielectric properties are proposed. The BTS thin films deposited at 15 Pa with large figure of merit (FOM) of 81.1, high tunability of 72.1%, moderate dielectric constant of 341, low loss tangent of 0.009 are considered to be appropriate as a field tunable ferroelectric material for electrically tunable devices.