A two dimensional analytical modeling of surface potential in triple metal gate (TMG) fully-depleted Recessed-Source/Drain (Re-S/D) SOI MOSFET
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- 作者：Anjali Priya ; priya.anjali10@gmail.com" class="auth_mail" title="E-mail the corresponding author ; Ram Awadh Mishra ramishra@mnnit.ac.in" class="auth_mail" title="E-mail the corresponding author
- 关键词：Recessed Source/Drain MOSFET ; Silicon On Insulator (SOI) MOSFET ; Short channel effect ; Triple Metal Gate (TMG) MOSFET ; Surface potential ; ATLAS 2-D device simulator
- 刊名：Superlattices and Microstructures
- 出版年：2016
- 出版时间：April 2016
- 年：2016
- 卷：92
- 期：Complete
- 页码：316-329
- 全文大小：1632 K
文摘
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Triple metal gate Recessed Source-Drain MOSFET.
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Reduced DIBL and short channel effect.
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Surface potential for oxide thickness.
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Surface potential for channel thickness.
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Surface potential for recessed source drain thickness.