Influence of laser power on atom probe tomographic analysis of boron distribution in silicon

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• 作者：Y. Tu^a ; ^{ytu@imr.tohoku.ac.jp} ; H. Takamizawa^a ; ¹ ; B. Han^a ; Y. Shimizu^a ; K. Inoue^a ; T. Toyama^a ; F. Yano^a ; ^b ; A. Nishida^c ; Y. Nagai^a
• 关键词：Dopant distribution ; Atom probe tomography ; Laser power ; Surface migration
• 刊名：Ultramicroscopy
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：173
• 期：Complete
• 页码：58-63
• 全文大小：850 K
• 卷排序：173

文摘

Influence of laser power on atom probe tomographic analysis of B distribution in Si is investigated. When using high laser power, inhomogeneous distributions of B in single-crystalline and polycrystalline Si are observed. Laser promoted migration of B atoms over the specimen is proposed to explain these effects.