Hydride vapor phase epitaxy of high quality {101虅3虅} semipolar GaN on m-plane sapphire coated with self-assembled SiO₂ nanospheres

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• 作者：Jiankun Yang ; Tongbo Wei ; Ziqiang Huo ; Qiang Hu ; Yonghui Zhang ; Ruifei Duan ; Junxi Wang
• 关键词：A3. Hydride vapor phase epitaxy ; B1. Sapphire ; B1. Semipolar GaN ; B2. SiO2 nanospheres
• 刊名：Journal of Crystal Growth
• 出版年：1 February, 2014
• 年：2014
• 卷：387
• 期：Complete
• 页码：101-105
• 全文大小：1586 K

文摘

Semipolar {101虅3虅} GaN layers were grown on self-assembled SiO₂ nanospheres sapphire (SSNS) by hydride vapor phase epitaxy. The RMS roughness was 1.1 nm for the scan of 20脳20 碌m² and the striated surface morphology almost disappeared. The full widths at half maximum of on-axis X-ray rocking curves were 324 arcsec rocking toward the [303虅2虅] direction and 413 arcsec rocking toward the [12虅10] direction, respectively. Compared to the GaN layer grown on the planar sapphire, the reduction of the defect density of semi-GaN grown on SSNS, such as basal stacking faults, partial dislocations and perfect dislocations, was demonstrated by both X-ray rocking curves and low-temperature photoluminescence. In addition, the Raman analyses also showed the partial relaxation of the stress using SSNS.