Large linear magnetoresistance in topological crystalline insulator Pb0.6Sn0.4Te
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- 作者：Subhajit Roychowdhurya ; Somnath Gharab ; Satya N. Guina ; A. Sundaresanb ; Kanishka Biswasa ; kanishka@jncasr.ac.in" class="auth_mail" title="E-mail the corresponding author
- 关键词：Topological crystalline insulator ; Lead tin telluride ; Linear magnetoresistance ; Band inversion ; Solid solution
- 刊名：Journal of Solid State Chemistry
- 出版年：2016
- 出版时间：January 2016
- 年：2016
- 卷：233
- 期：Complete
- 页码：199-204
- 全文大小：697 K
文摘
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Large non-saturating linear magnetoresistance was achieved in the topological crystalline insulator, Pb0.6Sn0.4Te.
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Highest magnetoresistance value as high as ~200% was achieved at 3 K at magnetic field of 9 T.
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Linear magnetoresistance in Pb0.6Sn0.4Te is mainly governed by the spatial fluctuation of the carrier mobility.