Growth of silicon carbide epitaxial layers on 150-mm-diameter wafers using a horizontal hot-wall chemical vapor deposition

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• 作者：Keiko Masumoto ; Chiaki Kudou ; Kentaro Tamura ; Johji Nishio ; Sachiko Ito ; Kazutoshi Kojima ; Toshiyuki Ohno ; Hajime Okumura
• 关键词：A1. Crystal morphology ; A3. Chemical vapor deposition processes ; B1. Inorganic compounds ; B2. Semiconducting silicon compounds
• 刊名：Journal of Crystal Growth
• 出版年：2013
• 出版时间：15 October, 2013
• 年：2013
• 卷：381
• 期：Complete
• 页码：139-143
• 全文大小：1892 K

文摘

Epitaxial layers on a 150-mm-diameter silicon carbide wafer have been grown using a horizontal hot-wall chemical vapor deposition system for three 150-mm-diameter wafers. We investigated the surface morphology and surface defects such as shallow pits and triangular defects of the grown epitaxial layers, as well as the thickness and carrier concentration uniformities. The shallow pit and triangular defect densities were 4.6 cm^?2 and 1.6 cm^?2, respectively, and the thickness and the carrier concentration uniformities were 3.9 % and 47 % , respectively. We focused on improving the carrier concentration distribution for practical use and concluded that the cause of the distribution was the distribution in the effective C/Si ratio in the direction of the gas flow.