Some physical investigations on ZnS<sub>1−xsub>Se<sub>xsub> films obtained by selenization of ZnS sprayed films using the Boubaker polynomials expansion scheme
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- 作者：S. Fridjine ; S. Touihri ; K. Boubaker ; M. Amlouk
- 关键词：A1. X-ray diffraction ; A1. Phtothermal protocol ; A1. Boubaker polynomials expansion scheme ; A1. Surface structure ; A3. Chemical vapor deposition process ; B2. Semiconducting II– ; VI materials
- 刊名：Journal of Crystal Growth
- 出版年：2010
- 出版时间：1 January 2010
- 年：2010
- 卷：312
- 期：2
- 页码：202-208
- 全文大小：653 K
文摘
ZnS<sub>1−xsub>Se<sub>xsub> thin films have been grown by selenization process, applied to ZnS sprayed thin films deposited on Pyrex glass substrates at 550 °C. The crystal structure and surface morphology were investigated by the XRD technique and by the atomic force microscopy. This structural study shows that selenium-free (x=0) ZnS thin films, prepared at substrate temperature T<sub>Ssub>=450 °C, were well crystallized in cubic structure and oriented preferentially along (1 1 1) direction. The thermal and mechanical properties were also investigated using a photothermal protocol along with Vickers hardness measurements. On the other hand, the analyze of the transmittance T(λ) and the reflectance R(λ), optical measurements of these films depicts a decrease in the band gap energy value E<sub>gsub> with an increase in Se content (x). Indeed, E<sub>gsub> values vary from 3.6 to 3.1 eV.