Electromigration behavior in Cu/Ni-P/Sn-Cu based joint system with low current density
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- 作者：Takuya Kadoguchia ; d ; takuya_kadoguchi@mail.toyota.co.jp" class="auth_mail" title="E-mail the corresponding author ; Keisuke Gotoub ; 1 ; Kimihiro Yamanakac ; Shijo Nagaod ; Katsuaki Suganumad
- 关键词：Electromigration ; Solder ; Power module ; Ni&ndash ; P ; Sn&ndash ; Cu
- 刊名：Microelectronics Reliability
- 出版年：2015
- 出版时间：December 2015
- 年：2015
- 卷：55
- 期：12
- 页码：2554-2559
- 全文大小：1462 K
文摘
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Electromigration was investigated with lower current density less than 10 kA/cm2.
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Electromigration accelerated the diffusion of Ni in Ni–P at the cathode.
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Ni–P disappeared at the cathode and Cu3Sn and Cu6Sn5 formed at the interface.
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Cu–P layer formed on the breakdown interface after current stressing.
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Electromigration suppressed the diffusion of Ni in the Ni–P at the anode.