The dependence of the optical energies on InGaN composition

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• 作者：O'Donnell ; K.P. ; Martin ; R.W. ; Trager-Cowan ; C. ; White ; M.E. ; Esona ; K. ; Deatcher ; C. ; Middleton ; P.G. ; et. al.
• 关键词：Bowing parameter ; Nitride semiconductors ; Optical properties ; Stokes’ ; shift
• 刊名：Materials Science and Engineering: B
• 出版年：2001
• 出版时间：May 22, 2001
• 年：2001
• 卷：82
• 期：1-3
• 页码：194-196
• 全文大小：93.1 K

文摘

A wide-ranging experimental approach reveals a linear relationship between photoluminescence band peak energy and measured indium fraction for In_xGa_1−xN epilayers with 0<x<0.40. We examine the dependence of the emission spectrum on composition using local measurements of the average indium content by Rutherford backscattering spectrometry, energy dispersive X-ray analysis, extended X-ray absorption fine structure and wavelength dispersed electron probe micro-analysis. Corresponding absorption and photoluminescence excitation data reveal the existence of a supplementary linear relationship between the optical bandgap and the indium fraction. Our observations provide definitive and conclusive evidence that the optical properties of InGaN do not conform to current theoretical descriptions of alloy band structure.