Impact of gate dielectric constant variation on tunnel field-effect transistors (TFETs)
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- 作者：Seung Kyu Kim ; Woo Young Choi ; wchoi@sogang.ac.kr" class="auth_mail" title="E-mail the corresponding author
- 关键词：Tunnel field effect transistors (TFETs) ; High-κ material ; Variation ; Gate dielectric constant variation
- 刊名：Solid State Electronics
- 出版年：2016
- 出版时间：February 2016
- 年：2016
- 卷：116
- 期：Complete
- 页码：88-94
- 全文大小：2777 K
文摘
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High-κ materials in polycrystalline nature induce localized κ-value variation.
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TFETs are more sensitive to gate dielectric constant variation than MOSFETs.
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Gate dielectric variation near the source-channel junction dominates TFET variation.