Flexible organic field-effect transistors with TIPS-Pentacene crystals exhibiting high electrical stability upon bending
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- 作者：Vivek Raghuwanshi ; Deepak Bharti ; Shree Prakash Tiwari ; sptiwari@iitj.ac.in" class="auth_mail" title="E-mail the corresponding author
- 关键词：Organic field-effect transistors (OFETs) ; Flexible ; TIPS-Pentacene crystal ; Bending ; Mechanical stability
- 刊名：Organic Electronics
- 出版年：2016
- 出版时间：April 2016
- 年：2016
- 卷：31
- 期：Complete
- 页码：177-182
- 全文大小：1909 K
文摘
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Flexible OFETs fabricated using HfO2/PVP gate dielectric and TIPS-Pentacene crystals.
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OFETs were studied for stability of electrical characteristics upon bending up to 48 h.
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Electrical characteristics degraded primarily due to increase in strain.
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Strain induces increase in dielectric surface roughness leading to performance degradation.
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Device performance is influenced more with magnitude of strain than its duration.