Effect of uniaxial strain on electrical properties of CNT-based junctionless field-effect transistor: Numerical study
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- 作者：Parisa Pourian pourianp@yahoo.com" class="auth_mail" title="E-mail the corresponding author ; Reza Yousefi ; r.yousefi@iaunour.ac.ir" class="auth_mail" title="E-mail the corresponding author ; Seyed Saleh Ghoreishi s.ghoreishi@iaunour.ac.ir" class="auth_mail" title="E-mail the corresponding author
- 关键词：Carbon nanotube ; Field effect transistors ; Junctionless transistors ; Non-equilibrium Green's function
- 刊名：Superlattices and Microstructures
- 出版年：2016
- 出版时间：May 2016
- 年：2016
- 卷：93
- 期：Complete
- 页码：92-100
- 全文大小：1342 K
文摘
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It was shown that junction-less CNT transistors have weak results in the OFF state.
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It is because of small energy bandgap of CNTs.
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The change of bandgap is one of the effects of applying uniaxial strain on CNTs.
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Then, the effects of strain on electrical properties of these FETs are investigated.
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We show that stain can significantly alter the OFF state behavior of the device.