Tuning the hysteresis voltage in 2D multilayer MoS₂ FETs

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• 作者：Jie Jiang ; ^{jiangjie@csu.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Zhouming Zheng ; Junjie Guo
• 关键词：MoS2 ; Two-dimensional materials ; Hysteresis voltage ; Traps ; Field-effect transistors
• 刊名：Physica B: Physics of Condensed Matter
• 出版年：2016
• 出版时间：1 October 2016
• 年：2016
• 卷：498
• 期：Complete
• 页码：76-81
• 全文大小：1885 K

文摘

The hysteresis tuning is of great significance before the two-dimensional (2D) molybdenum disulfide (MoS₂) field-effect transistors (FETs) can be practically used in the next-generation nanoelectronic devices. In this paper, a simple and effective annealing method was developed to tune the hysteresis voltage in 2D MoS₂ transistors. It was found that high temperature (175 °C) annealing in air could increase the hysteresis voltage from 8.0 V (original device) to 28.4 V, while a next vacuum annealing would reduce the hysteresis voltage to be only 2.0 V. An energyband diagram model based on electron trapping/detrapping due to oxygen adsorption is proposed to understand the hysteresis mechanism in multilayer MoS₂ FET. This simple method for tuning the hysteresis voltage of MoS₂ FET can make a significant step toward 2D nanoelectronic device applications.