A study of threshold switching of NbO2 using atom probe tomography and transmission electron microscopy
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- 作者：J.H. Leea ; E.J. Chab ; Y.T. Kimb ; B.K. Chaeb ; J.J. Kima ; S.Y. Leea ; H.S. Hwangb ; C.G. Parkb ; c ; cgpark@postech.ac.kr" class="auth_mail" title="E-mail the corresponding author
- 关键词：Threshold switching ; NbO2 ; Voltage drop ; Atom probe ; Local crystallization
- 刊名：Micron
- 出版年：2015
- 出版时间：December 2015
- 年：2015
- 卷：79
- 期：Complete
- 页码：101-109
- 全文大小：3976 K
文摘
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Atom probe tomography (APT) combined with in-situ TEM probing technique was performed to understand the threshold switching in amorphous NbO2.
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We proved that the local crystallization is attributed to this threshold switching.
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The local crystallization of amorphous NbO2 through an applied voltage bias was proved by comparing the ToF spectra of a-NbO2 and c-NbO2 obtained using APT.
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Time shift of a-NbO2 could be explained by the voltage drop due to the high resistivity of a-NbO2.
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The electrical, compositional, and structural information could be directly combined by applying a bias through the AP tip.