Improvement of the light output of AlGaInP-based light-emitting diode by employing highly transparent Au/ITO p-type electrode

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• 作者：Byoungjun Choi^a ; Dae-Hyun Kim^a ; Daesung Kang^a ; ^b ; Tae-Yeon Seong^a ; ^c ; ^{tyseong@korea.ac.kr}
• 关键词：Au/ITO ; Transparency ; Ohmic contact ; Light-emitting diode ; Electrode
• 刊名：Journal of Alloys and Compounds
• 出版年：2017
• 出版时间：30 March 2017
• 年：2017
• 卷：699
• 期：Complete
• 页码：1180-1185
• 全文大小：1966 K
• 卷排序：699

文摘

Highly transparent and low-resistance Au/ITO contacts on p-GaP were developed. Unlike AuBe/Au, Au/ITO films are highly transparent (92.8%) at a wavelength of 617 nm. LEDs with Au/ITO show much higher light output power than those with AuBe/Au. Electrical improvement attributed to combination of reduced SBHs and conductive Au2P3.