Cu₄O₃-based all metal oxides for transparent photodetectors

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• 作者：Hong-Sik Kim^aAuthor Vitae ; Melvin David Kumar^bAuthor Vitae ; Wang-Hee Park^aAuthor Vitae ; Malkeshkumar Patel^aAuthor Vitae ; Joondong Kim^a ; ^{joonkim@inu.ac.kr}Author Vitae
• 关键词：All-oxide devices ; Cu4O3 ; Transparent photodetectors ; NiO ; Hole transporting layer
• 刊名：Sensors and Actuators A: Physical
• 出版年：2017
• 出版时间：1 January 2017
• 年：2017
• 卷：253
• 期：Complete
• 页码：35-40
• 全文大小：1836 K
• 卷排序：253

文摘

Cu4O3-based all metal oxide transparent photodetectors were realized. Cu4O3/ZnO/ITO transparent device has high transmittances. NiO layer was functionally applied to improve the photoresponse. A route for transparent photoelectric devices was suggested and demonstrated.