Carrier trapping anisotropy in ambipolar SnO thin-film transistors

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• 作者：Hao Luo ; ^{luohao@nimte.ac.cn} ; Lingyan Liang ; Hongtao Cao ; ^{h_cao@nimte.ac.cn}
• 关键词：Tin monoxide ; Ambipolar thin-film transistor ; Gate-bias stress
• 刊名：Solid-State Electronics
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：129
• 期：Complete
• 页码：88-92
• 全文大小：1318 K
• 卷排序：129

文摘

Anisotropic carrier trapping was observed in ambipolar SnO thin-film transistors. The carrier trapping could be described by the stretched exponential model. The carrier trapping was resulted from the multiple trapping states in the channel or/and at the channel-insulator interface.