Effect of thermal annealing on properties of polycrystalline ZnO thin films

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• 作者：L.V. Gritsenko^a ; ^{gritsenko_lv@mail.ru} ; Kh.A. Abdullin^b ; M.T. Gabdullin^b ; Zh.K. Kalkozova^b ; S.E. Kumekov^a ; Zh.O. Mukash^a ; A.Yu. Sazonov^c ; E.I. Terukov^d
• 关键词：A1. Thermal treatment ; A1. Electrical properties ; A1. Photoluminescence ; A2. MOCVD ; A2. Hydrothermal crystal growth ; B2. ZnO thin films
• 刊名：Journal of Crystal Growth
• 出版年：2017
• 出版时间：1 January 2017
• 年：2017
• 卷：457
• 期：Complete
• 页码：164-170
• 全文大小：1473 K
• 卷排序：457

文摘

An annealing of ZnO films in oxygen leads to decrease of free carrier concentration. A hydrogen plasma treatment improves the electrical and photoluminescent properties. The effect of plasma treatment on the PL intensity depends on preliminary treatments. A correlation between the Fermi level and shift of optical absorption edge was found.