Experimental characterization of low-frequency noise in power MOSFETs for defectiveness modelling and technology assessment
详细信息 查看全文
- 作者：Paolo Magnone
- 关键词：LF noise ; 1/f Noise ; Flicker noise ; Power MOSFET ; U-MOSFET ; Trench-gate power MOSFET ; Drain current noise ; Low-frequency noise measurement ; Gate oxide ; Defectiveness
- 刊名：Measurement
- 出版年：June 2014
- 年：2014
- 卷：52
- 期：Complete
- 页码：47-54
- 全文大小：1359 K
文摘
- •
We implemented a low-noise laboratory set-up for LF noise measurements on power MOSFETs.
- •
We validated the measurement technique in discrete silicon power U-MOSFETs.
- •
These measurements can be used to detect the physical model of 1/f-like fluctuations.
- •
Experimental data in association with the selected model are used to estimate the trap density in the gate oxide.