The INFN-FBK pixel R&D program for HL-LHC

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• 作者：M. Meschini^a ; ^{marco.meschini@cern.ch" class="auth_mail" title="E-mail the corresponding author} ; G.F. Dalla Betta^b ; ^c ; M. Boscardin^d ; ^c ; G. Calderini^e ; G. Darbo^f ; G. Giacomini^d ; A. Messineo^g ; ^h ; S. Ronchin^d
• 关键词：Silicon detectors ; Irradiation ; Active edge ; 3D pixels ; Planar pixels
• 刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
• 出版年：2016
• 出版时间：21 September 2016
• 年：2016
• 卷：831
• 期：Complete
• 页码：116-121
• 全文大小：6775 K

文摘

We report on the ATLAS and CMS joint research activity, which is aiming at the development of new, thin silicon pixel detectors for the Large Hadron Collider Phase-2 detector upgrades. This R&D is performed under special agreement between Istituto Nazionale di Fisica Nucleare and FBK foundation (Trento, Italy). New generations of 3D and planar pixel sensors with active edges are being developed in the R&D project, and will be fabricated at FBK. A first planar pixel batch, which was produced by the end of year 2014, will be described in this paper. First clean room measurement results on planar sensors obtained before and after neutron irradiation will be presented.