The growth of hexagonal boron nitride thin films on silicon using single source precursor

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• 作者：Rohr ; C. ; Boo ; J.-H. ; et. al.
• 关键词：Boron nitride ; Chemical vapour deposition (CVD) ; Organometallic vapour deposition ; Heterostructures
• 刊名：Thin Solid Films
• 出版年：1998
• 出版时间：June 8, 1998
• 年：1998
• 卷：322
• 期：1-2
• 页码：9-13
• 全文大小：263 K

文摘

Poylcrystalline hexagonal boron nitride thin films were deposited on silicon substrates in the temperature range of 600–900°C from the organometallic single source precursor borane–triethylamine complex, (C₂H₅)₃N·BH₃. Hydrogen was used as carrier gas and additional nitrogen was supplied by molecular beam of ammonia, or nitrogen via a remote plasma. The films were characterized by Fourier transform infrared spectroscopy, Auger electron spectroscopy, transmission electron diffraction, optical transmission, and atomic force microscopy.