MOCVD of BN and GaN thin films on silicon: new attempt of GaN growth with BN buffer layer

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• 作者：Boo ; Jin-Hyo ; Rohr ; Carsten ; Ho ; Wilson
• 关键词：h-BN-buffer layer ; Single source precursor ; Supersonic jet epitaxy ; h-GaN thin film
• 刊名：Journal of Crystal Growth
• 出版年：1998
• 出版时间：June 15, 1998
• 年：1998
• 卷：189-190
• 期：Complete
• 页码：439-444
• 全文大小：167 K

文摘

Highly oriented polycrystalline h-BN thin films were deposited on silicon substrates in the temperature range of 600–900°C from the single molecular precursor of borane–triethylamine complex, (C₂H₅)₃N : BH₃, by supersonic jet assisted chemical vapor deposition. Hydrogen was used as carrier gas, and additional nitrogen was supplied by either ammonia through a nozzle or nitrogen via a remote microwave plasma. Hexagonal GaN films were also grown on Si(1 0 0) with h-BN buffer layers at temperatures between 550 and 750°C with dual supersonic molecular beam sources. Triethylgallium, (C₂H₅)₃Ga, and ammonia, NH₃, were used as precursors. Hydrogen was used as seeding gas for the precursors, providing a wide range of possible kinetic energies for the supersonic beams. The h-BN buffer layers and the GaN films were characterized in situ by Auger electron spectroscopy (AES), and ex situ by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and optical transmission. This is the first report of growing the h-BN films on silicon substrates from the single source precursor of borane-triethylamine complex and new attempts of GaN film growth on silicon with BN buffer layer.