Radio-frequency and low noise characteristics of SOI technology on plastic for flexible electronics

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• 作者：A. Lecavelier des Etangs-Levallois ; M. Lesecq ; F. Danneville ; Y. Tagro ; S. Lepilliet ; V. Hoel ; D. Troadec ; D. Gloria ; C. Raynaud ; E. Dubois
• 关键词：Flexible electronics ; Ultrathin chips ; SOI technology ; CMOS ; Millimetre waves
• 刊名：Solid-State Electronics
• 出版年：December, 2013
• 年：2013
• 卷：90
• 期：Complete
• 页码：73-78
• 全文大小：2669 K

文摘

In this work, we report on the HF performance and noise characteristics of 65 nm SOI-CMOS technology transferred onto plastic films. After transfer-bonding onto a thin flexible substrate, RF-SOI-MOSFETs are shown to feature high unity-current-gain cutoff and maximum oscillation frequencies f_T/f_MAX amounting to 150/160 GHz for n-type and 100/130 GHz for p-type, respectively. Minimal noise figure and associated gain NF_min/G_ass of 0.57 dB/17.8 dB and 0.57 dB/17.0 dB are measured at 10 GHz for n- and p-MOSFETs, respectively.